PART |
Description |
Maker |
MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
MA2S376 |
Silicon epitaxial planar type UHF BAND, 15 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
1SV273 |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
JDV4P08U |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
1SV101 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM TUNER APPLICATIONS
|
TOSHIBA
|
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS
|
TOSHIBA
|
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS
|
TOSHIBA
|
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
KDV269 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC Holdings KEC(Korea Electronics)
|
|